Re: question for Mariss

Shottky diodes, more properly called metal barrier diodes, do not
have a junction in the classical sense. Because there is no silicon
junction, there isn't the .7V barrier voltage nor are there any
minority carriers that have to be swept out on voltage reversal
(reverse recovery time). Switching times are in the sub-nanosecond
range.

The main drawback is very low reverse voltage breakdown (<10 to 20V)
and large reverse leakage currents (>10 uA).

The diode that bears his name was invented in 1938 by Walter Schottky
and the first practical versions appeared in the mid to late 1950's.
The era that stretched from the the late 40's to the late 50's was
the classic age of semiconductor physics. It spans from 1948 (the
year I was born) when the first working transistor was built until
1958 when the first working IC was built by Texas Instruments.

For those interested, the effort to find and read the history of this
decade is well worth it.

Mariss

--- In CAD_CAM_EDM_DRO@yahoogroups.com, JanRwl@A... wrote:
> In a message dated 3/23/2003 3:45:21 PM Central Standard Time,
> mariss92705@y... writes:
>
> > Math seems OK to you?
> >
>
> Thanks, Mariss, but I was unaware of Silicon diodes with only 0.3
drop, and
> Germanium (0.2 V) seems to have fallen from favor for such low-
voltage-drop
> purposes---or, have I just gotten SO far out of touch there is no
hope,
> anymore!
>
> So, there would have to be FOUR (if TINY) diodes added for this, or
is a
> "bridge rectifier" with only total 0.6 V. drop available, now, in
SMT
> package????????? I guess the teens into electronics, now, are
> unintimidated by all this TINY SMT stuff, and it IS beautiful to
behold, but
> for us OLDE folkes, WHEW ! ! ! ! !
>
> Jan Rowland
>
>
> [Non-text portions of this message have been removed]